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Qspeed X-Series Diodes
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Product Details
Qspeed™ diodes have the lowest QRR of any Silicon diode. Their recovery characteristics increase efficiency, reduce EMI and eliminate snubbers.
Product Highlights
Features
- Low QRR, Low IRRM, Low tRR
- High dIF/dt capable (1000A/µs)
- Soft recovery
Benefits
- Increases efficiency
- Eliminates need for snubber circuits
- Reduces EMI filter component size & count
- Enables extremely fast switching
Applications
- Power Factor Correction (PFC) Boost Diode
- Motor drive circuits
- DC-AC Inverters
Related Information
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Applications
Component Selection Guide
| Datasheet | VRRM MAX | IF<AVG> TJ =150°1 | VF<TYP> TJ =150° | QRR TJ =25° | QRR TJ =125° |
|---|---|---|---|---|---|
| LXA03D530 | 530 V | 3 A | 1.33 V | 39 nC | 75 nC |
| LXA03T6002 | 600 V | 3 A | 2.1 V | 21 nC | 43 nC |
| LXA03B6003 | 600 V | 5 A | 2.1 V | 21 nC | 43 nC |
| LXA04T6002 | 600 V | 4 A | 2.1 V | 21 nC | 50 nC |
| LXA04B6003 | 600 V | 4 A | 2.1 V | 21 nC | 50 nC |
| LXA06T6002 | 600 V | 6 A | 2.0 V | 30 nC | 71 nC |
| LXA06B6003 | 600 V | 6 A | 2.0 V | 30 nC | 71 nC |
| LXA08T6002 | 600 V | 8 A | 2.1 V | 31 nC | 82 nC |
| LXA08B6003 | 600 V | 8 A | 2.1 V | 31 nC | 82 nC |
| LXA08T600C4 | 600 V | 4 A | 2.1 V | 21 nC | 50 nC |
| LXA10T6002 | 600 V | 10 A | 2.1 V | 36 nC | 94 nC |
| LXA12T600C4 | 600 V | 6 A | 2.1 V | 30 nC | 71 nC |
| LXA16T600C4 | 600 V | 8 A | 2.1 V | 31 nC | 82 nC |
| LXA15T6002 | 600 V | 15 A | 2.2 V | 43 nC | 120 nC |
| LXA20T6002 | 600 V | 20 A | 2.3 V | 51 nC | 140 nC |
NOTES:
- Temperatures are in degrees celsius (°C).
- Uses the TO-220AC package type.
- Uses the D2PAK package type.
- Uses the TO-220AB package type.
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